VGF Systems


The Kronos systems employ the Vertical Gradient Freeze (VGF) method. The high operating pressure in the system means that even materials whose components have a high vapor pressure can be crystallized. The system is available in a pressure range of 10–40 bar for the crystallization of different compound semiconductors. This method allows the industrial production of crystals such as Gallium Arsenide (GaAs) in the standard version with a maximum pressure of 10 bar and Indium Phosphide (InP) in a version with a maximum pressure of 40 bar. We also offer a mobile system for charging and emptying the system.

Product Data Overview

Material: Gallium Arsenide, Indium Phosphide

Crucible diameter: 4–6"
Crucible height: up to 450 mm
Chamber diameter: 800 mm
Chamber height: 975 mm
Operating pressure: max. 40 bar
Height: 2,900 mm
Width: 1,650 mm
Depth: 1,350 mm
Weight (total):    3,500 kg

Immediate Contact

Please complete all fields marked with *.
Please solve the following question:

PVA TePla Singapore Pte. Ltd.
12 New Industrial Road, #05-03
Morningstar Centre
Singapore, 536202

Telephone: +65 9631 4005